- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,088
In-stock
|
Diodes Incorporated | MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 180 mA, 180 mA | 8 Ohms | 1 V, 1 V | 870 pC, 870 pC | Enhancement | ||
|
|
GET PRICE |
3,589
In-stock
|
Toshiba | MOSFET Small Signal MOSFET | 10 V, 10 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 180 mA, 180 mA | 20 Ohms, 20 Ohms | 400 mV, 400 mV | Enhancement |
