- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,901
In-stock
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Fairchild Semiconductor | MOSFET 40V P-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6.7 A | 44 mOhms | Enhancement | PowerTrench | |||||
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5,768
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V -6.7A 40mOhm 33.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 40 mOhms | - 0.7 V | 50 nC | |||||
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3,884
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 40mOhms 33.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 40 mOhms | 33.3 nC | Enhancement | |||||
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2,856
In-stock
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onsemi | MOSFET -20V -6.7A P-Channel | 8 V | SMD/SMT | ChipFET-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 42 mOhms | Enhancement | ||||||||
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1,333
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 6.7 A | 410 mOhms | Enhancement | QFET | |||||
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446
In-stock
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Diodes Incorporated | MOSFET 30V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.7 A | 70 mOhms | Enhancement | ||||||
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24
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 U-DFN2020-6 T&R 3K | +/- 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 6.7 A | 20 mOhms | - 1 V | 48.7 nC | Enhancement |