- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
10,256
In-stock
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Diodes Incorporated | MOSFET Dual N-Ch Enh Mode 30V 4.2Ohm 200mA | 20 V, 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 260 mA, 260 mA | 2.8 Ohms, 2.8 Ohms | 800 mV, 800 mV | 870 pC, 870 pC | Enhancement | ||
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GET PRICE |
6,630
In-stock
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Nexperia | MOSFET 60V dual N-channel Trench MOSFET | 20 V, 20 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 260 mA, 260 mA | 5.7 Ohms, 5.7 Ohms | 1.1 V | 1 nC, 1 nC | Enhancement |
