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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
DMG6602SVTQ-7
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Diodes Incorporated MOSFET 30V Vds 20V Vgs Complmtry Enh FET +/- 20 V, +/- 20 V SMD/SMT TSOT-26-6 - 55 C + 150 C Reel 2 Channel Si N-Channel, P-Channel 30 V, - 30 V 3.4 A, - 2.8 A 100 mOhms, 140 mOhms 1 V, - 2.3 V 9 nC, 7 nC Enhancement
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