- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
13,163
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 180 A | 1.8 mOhms | - 2.2 V | 286 nC | Enhancement | OptiMOS | ||
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GET PRICE |
15,730
In-stock
|
Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | +/- 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 180 A | 1.8 mOhms | - 2.2 V | 286 nC | Enhancement | |||
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GET PRICE |
754
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | - 180 A | 2.8 mOhms | 190 nC | OptiMOS |
