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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BSS169 H6327
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RFQ
8,525
In-stock
Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 170 mA 2.9 Ohms - 2.9 V 2.8 nC Depletion
BSS169H6327XTSA1
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RFQ
5,556
In-stock
Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 170 mA 2.9 Ohms - 2.9 V 2.8 nC Depletion
BSP324H6327XTSA1
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RFQ
1,542
In-stock
Infineon Technologies MOSFET N-Ch 400V 170mA SOT-223-3 20 V SMD/SMT SOT-223-4 - 55 C + 150 C Reel 1 Channel Si N-Channel 400 V 170 mA 13.6 Ohms 1.9 V 4.54 nC Enhancement
BSS169H6327XT
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RFQ
1,743
In-stock
Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 170 mA 2.9 Ohms - 2.9 V 2.8 nC Depletion
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