- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,584
In-stock
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Nexperia | MOSFET 60 V, single N-chan Trench MOSFET | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 1.6 V | 0.33 nC | Enhancement | |||
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GET PRICE |
3,640
In-stock
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Nexperia | MOSFET 60 V, single N-chan Trench MOSFET | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 1.6 V | 0.33 nC | Enhancement | |||
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GET PRICE |
6,053
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 7.5Ohm 5Vgs 210mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 3 Ohms | 2 V | 352 pC | Enhancement | ||
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2,889
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 4.7 Ohms | 1.1 V | Enhancement | |||||
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GET PRICE |
6,000
In-stock
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Toshiba | MOSFET Small-signal Nch MOSFET ID: 0.15A | 20 V | SMD/SMT | SOT-416-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 2.8 Ohms | 1.1 V | 350 pC | Enhancement |
