- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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17,648
In-stock
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Nexperia | MOSFET 55V N-channel Trench MOSFET | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 210 mA | 2.3 Ohms | 600 mV | 500 pC | Enhancement | ||||
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12,852
In-stock
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Fairchild Semiconductor | MOSFET 50V N-CH Logic Level | SMD/SMT | SOT-323-3 | Reel | 1 Channel | Si | N-Channel | 50 V | 210 mA | 6 Ohms | Enhancement | |||||||||
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12,496
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 mA | 1.5 Ohms | 1 V | 821 pC | Enhancement | ||||
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2,230
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 96pF 4nC | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 210 mA | 6 Ohms | 3 V | 4 nC | Enhancement | PowerDI | |||
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1,738
In-stock
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onsemi | MOSFET NFET 20V 285mA TR | 10 V | SMD/SMT | SOT-723-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 210 mA | 3.4 Ohms | Enhancement |
