- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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11,451
In-stock
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Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 200 mA | 1.4 Ohms | Enhancement | ||||
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8,786
In-stock
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Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | ||||
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4,005
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | Enhancement | ||||
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16,631
In-stock
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Diodes Incorporated | MOSFET 50V N-Ch Enh FET 20Vgss 300Pd 200mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | 1.2 V | - | Enhancement | ||
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62,996
In-stock
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Diodes Incorporated | MOSFET 300mW 50V DSS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 3.5 Ohms | Enhancement | ||||
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2,692
In-stock
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Diodes Incorporated | MOSFET N-Chnl 50V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 200 mA | 1.4 Ohms | Enhancement | ||||
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1,400
In-stock
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Diodes Incorporated | MOSFET 30V 300mA | 10 V | SMD/SMT | X2-DFN1006-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 200 mA | 650 mOhms | 0.9 V | Enhancement | |||
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5,782
In-stock
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Diodes Incorporated | MOSFET N-Channel | 10 V | SMD/SMT | X2-DFN1310-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 200 mA | 1.5 Ohms | Enhancement | ||||
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1,412
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 mA | 10 Ohms | Enhancement | ||||
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14,635
In-stock
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Diodes Incorporated | MOSFET 12V N-Ch Enh FET 8 VGS 60pF 0.92nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 200 mA | 366 mOhms | 1 V | 0.96 nC | Enhancement | ||
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GET PRICE |
1,672
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 mA | 10 Ohms | Enhancement |
