- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Packaging :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
46,129
In-stock
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | ||||
|
|
GET PRICE |
22,748
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel Sm Sig | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | |||||
|
|
GET PRICE |
4,005
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | Enhancement | ||||
|
|
GET PRICE |
11,914
In-stock
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | ||||
|
|
GET PRICE |
3,160
In-stock
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | ||||
|
|
GET PRICE |
12,667
In-stock
|
Nexperia | MOSFET BSS138AKA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5.5 Ohms | 1.2 V | 0.39 nC | Enhancement | ||
|
|
GET PRICE |
7,725
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1.4 V | 1.5 nC | |||
|
|
GET PRICE |
8,995
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.5 Ohms | 800 mV | 1.5 nC | Enhancement | ||
|
|
GET PRICE |
7,608
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNALN-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1.3 V | 1 nC | Enhancement | ||
|
|
GET PRICE |
1,601
In-stock
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | ||||
|
|
GET PRICE |
1,479
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel Sm Sig | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | |||||
|
|
GET PRICE |
10,647
In-stock
|
Toshiba | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | 10 V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | |||||||
|
|
GET PRICE |
9,228
In-stock
|
Toshiba | MOSFET Small-signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 8.1 Ohms | 1.1 V | 0.27 nC | Enhancement | ||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.5 Ohms | 800 mV | 1.5 nC | Enhancement | |||
|
|
VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.5 Ohms | 800 mV | 1.5 nC | Enhancement | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1 nC | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET SMOS | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 2.5 V | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET Small-signal MOSFET 60V, 150mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2 Ohms | Enhancement | |||||
|
|
VIEW | Toshiba | MOSFET 60V VDSS 20V VGSS 200mA ID 150mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 3.1 V | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET SS FET N-Ch 0.2A 60V 20V 17pF | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | Enhancement | |||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 200mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.5 Ohms | 800 mV | 1.5 nC | Enhancement | |||
|
|
GET PRICE |
257
In-stock
|
Toshiba | MOSFET N-Ch Sm Sig FET Id 0.2A 60V 20VGSS | SMD/SMT | SOT-346-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | 3.1 V | |||||||
|
|
VIEW | Toshiba | MOSFET N-Ch Sm Sig FET 0.2A 60V 2-in-1 | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | 3.1 V |
