- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,000
In-stock
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STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | ||||||||
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2,743
In-stock
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STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | ||||||
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1,079
In-stock
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STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | ||||||
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4,342
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 2 A | 3.4 Ohms | Enhancement | |||||||
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20,040
In-stock
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STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | ||||||
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1,485
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.7 Ohms | Enhancement | QFET | ||||||
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755
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 2A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.7 Ohms | Enhancement | CoolMOS | ||||||
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838
In-stock
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STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | ||||||||
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128
In-stock
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IXYS | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 5.1 Ohms | 5 V | 7 nC | Enhancement | PolarHV | ||||
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34
In-stock
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IXYS | MOSFET 2 Amps 1000V 7.5 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 7.5 Ohms | Enhancement | |||||||
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730
In-stock
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onsemi | MOSFET NCH 10V DRIVE SERIES | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 1500 V | 2 A | 13 Ohms | |||||||||||
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2,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 2 Amps 800V 6.2 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6.2 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 2 Amps 1000V 7 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 7 Ohms | Enhancement | |||||||
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95,000
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.8 Ohms | 11 nC | Enhancement |