- Manufacture :
- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,743
In-stock
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STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | |||||
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20,040
In-stock
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STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | |||||
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755
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 2A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.7 Ohms | Enhancement | CoolMOS | |||||
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2,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6 Ohms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 2 Amps 800V 6.2 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6.2 Ohms | Enhancement |
