- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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34,600
In-stock
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Vishay Semiconductors | MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id | - 8 V, + 8 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 3 W | N-Channel | 60 V | 2 A | 240 mOhms | 460 mV | 2.5 nC | 3000 | Green available | ||||||||||
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4,852
In-stock
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Diodes Incorporated | MOSFET 60V N-CH. Low Side MOSFET | - | SMD/SMT | SO-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 250 mOhms | - | - | Enhancement | IntelliFET | |||||||
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2,421
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 105 mOhms | 1.2 V | 7 nC | Enhancement | |||||||||
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3,610
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 580 mOhms | 800 mV | 6 nC | Enhancement | ||||||||
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1,976
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Intellifet 200mohm 2A 490mJ | 5 V | SMD/SMT | SOT-223-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 150 mOhms | 700 mV | Enhancement | IntelliFET | ||||||||
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12,500
In-stock
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Diodes Incorporated | MOSFET Low Side IntelliFET | 5 V | SMD/SMT | SO-8 | - 40 C | + 125 C | Reel | 1 Channel | N-Channel | 60 V | 2 A | 150 mOhms | 0.7 V | Enhancement | IntelliFET | |||||||||
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VIEW | Toshiba | MOSFET N-Ch FET RDS .23 Ohm IDSS 100uA VDS 60V | SMD/SMT | SC-62-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 2 A | 440 mOhms | ||||||||||||||
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2,610
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 105 mOhms | 1.2 V | 7 nC | Enhancement |
