- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,852
In-stock
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Diodes Incorporated | MOSFET 60V N-CH. Low Side MOSFET | - | SMD/SMT | SO-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 250 mOhms | - | - | Enhancement | IntelliFET | ||||
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425
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch FET FET 2A 480mJ Enh | 5 V | SMD/SMT | SOT-223-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 65 V | 2 A | 250 mOhms | Enhancement | IntelliFET | ||||||
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10,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: 2A, VDSS: 40V | 1.8 V | SMD/SMT | CST3B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 2 A | 250 mOhms | 1.2 V | 1.1 nC | Enhancement |