- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 10 Ohms (1)
- 100 mOhms (1)
- 105 mOhms (2)
- 110 mOhms (1)
- 125 mOhms (2)
- 13 Ohms (4)
- 140 mOhms (1)
- 150 mOhms (4)
- 151 mOhms (1)
- 160 mOhms (1)
- 178 mOhms (1)
- 180 mOhms (1)
- 2.4 Ohms (1)
- 2.7 Ohms (2)
- 2.75 Ohms (3)
- 2.8 Ohms (2)
- 23 Ohms (1)
- 230 mOhms (1)
- 236 mOhms (1)
- 240 mOhms (1)
- 250 mOhms (3)
- 260 mOhms (1)
- 280 mOhms (1)
- 3.26 Ohms (1)
- 3.4 Ohms (3)
- 3.5 Ohms (3)
- 310 mOhms (1)
- 390 mOhms (1)
- 4.2 Ohms (3)
- 4.3 Ohms (2)
- 4.5 Ohms (2)
- 4.7 Ohms (2)
- 4.8 Ohms (3)
- 40 mOhms (1)
- 440 mOhms (1)
- 452 mOhms (1)
- 5 Ohms (1)
- 5.1 Ohms (2)
- 540 mOhms (1)
- 580 mOhms (1)
- 6 Ohms (3)
- 6.2 Ohms (1)
- 6.3 Ohms (1)
- 6.5 Ohms (1)
- 7 Ohms (2)
- 7.5 Ohms (3)
- 8.5 Ohms (2)
- 93 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
80 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Factory Pack Quantity | RoHS | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
34,600
In-stock
|
Vishay Semiconductors | MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id | - 8 V, + 8 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 3 W | N-Channel | 60 V | 2 A | 240 mOhms | 460 mV | 2.5 nC | 3000 | Green available | |||||||||||
|
2,495
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | |||||||||
|
6,791
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 140mOhms 9.5nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 2 A | 140 mOhms | 2 V | 9.5 nC | Enhancement | |||||||||
|
13,151
In-stock
|
Fairchild Semiconductor | MOSFET 150V 2A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2 A | 452 mOhms | 800 mV | 4.5 nC | Enhancement | PowerTrench | ||||||||
|
5,965
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Chan UniFET | 30 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 400 V | 2 A | 2.8 Ohms | 5 V | 4.5 nC | ||||||||||||
|
4,073
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.4 Ohms | 2.1 V | 16 nC | Enhancement | CoolMOS | ||||||||
|
76
In-stock
|
IXYS | MOSFET 4500V 2A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 2 A | 23 Ohms | 3.5 V to 5.5 V | 156 nC | Enhancement | |||||||||
|
2,000
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | ||||||||||||
|
2,743
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | ||||||||||
|
1,079
In-stock
|
STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | ||||||||||
|
4,852
In-stock
|
Diodes Incorporated | MOSFET 60V N-CH. Low Side MOSFET | - | SMD/SMT | SO-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 250 mOhms | - | - | Enhancement | IntelliFET | ||||||||
|
13,841
In-stock
|
onsemi | MOSFET NCH 1.8V Power MOSFE | 12 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 310 mOhms | 400 mV | 1.8 nC | Enhancement | |||||||||
|
6,549
In-stock
|
Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 180 mOhms | Enhancement | |||||||||||
|
11,618
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch PowerTrench 1.8 VGS Spec | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 40 mOhms | Enhancement | PowerTrench | ||||||||||
|
5,098
In-stock
|
Fairchild Semiconductor | MOSFET SC70-6 N-CH 30V | 20 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 100 mOhms | Enhancement | PowerTrench | ||||||||||
|
59,790
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 2A 140mOhm 9.5nC LogLvl | 16 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 2 A | 280 mOhms | 9.5 nC | |||||||||||||
|
54,590
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 2 Amp | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2 A | 260 mOhms | Enhancement | |||||||||||
|
4,342
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 2 A | 3.4 Ohms | Enhancement | |||||||||||
|
2,712
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850mOhm Zener | 20 V, 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.4 Ohms | 2.5 V | 7.4 nC | Enhancement | SuperFET II | ||||||||
|
1,692
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 3400 mOhm Zener embedded, IPAK PKG | 20 V, 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.4 Ohms | 2.5 V | 7.4 nC | Enhancement | SuperFET II | ||||||||
|
2,378
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2 A | 236 mOhms | 2.9 nC | PowerTrench | ||||||||||||
|
1,992
In-stock
|
STMicroelectronics | MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.8 Ohms | 3.75 V | 11 nC | Enhancement | |||||||||
|
2,100
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | ||||||||||
|
4,773
In-stock
|
Diodes Incorporated | MOSFET 30V N Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 150 mOhms | 0.7 V | 2.93 nC | Enhancement | |||||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | ||||||||||
|
6,960
In-stock
|
onsemi | MOSFET NCH 1.2V Power MOSFE | 9 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 540 mOhms | 300 mV | 2.9 nC | Enhancement | |||||||||
|
2,485
In-stock
|
Diodes Incorporated | MOSFET 150V N-Ch Enh Fet 310mOhm 10Vgs 2.0A | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2 A | 178 mOhms | 1 V | 8.7 nC | Enhancement | |||||||||
|
5,537
In-stock
|
Diodes Incorporated | MOSFET 600mW 20Vdss | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2 A | 110 mOhms | Enhancement | |||||||||||
|
3,183
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | |||||||||||
|
5,325
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2 A | 151 mOhms | 800 mV | 14.3 nC | Enhancement |