- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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864
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.7 Ohms | Enhancement | QFET | |||||
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960
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 2A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.7 Ohms | Enhancement | CoolMOS | |||||
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238
In-stock
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Fairchild Semiconductor | MOSFET 700V N-Channel Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 2 A | 6.3 Ohms | Enhancement | QFET | |||||
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118
In-stock
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Toshiba | MOSFET N-Ch MOS 2A 650V 30W 380pF 3.26 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 650 V | 2 A | 3.26 Ohms | |||||||||||
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2,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement |
