- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6,791
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 140mOhms 9.5nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 2 A | 140 mOhms | 2 V | 9.5 nC | Enhancement | |||||
|
13,151
In-stock
|
Fairchild Semiconductor | MOSFET 150V 2A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2 A | 452 mOhms | 800 mV | 4.5 nC | Enhancement | PowerTrench | ||||
|
5,965
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Chan UniFET | 30 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 400 V | 2 A | 2.8 Ohms | 5 V | 4.5 nC | ||||||||
|
9,194
In-stock
|
IR / Infineon | MOSFET 55V, Logic level 2A 140 mOhm Auto MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | Si | N-Channel | 55 V | 2 A | 140 mOhms | 9.5 nC | ||||||||||
|
59,790
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 2A 140mOhm 9.5nC LogLvl | 16 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 2 A | 280 mOhms | 9.5 nC | |||||||||
|
2,378
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2 A | 236 mOhms | 2.9 nC | PowerTrench |