- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,251
In-stock
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Fairchild Semiconductor | MOSFET PT8 40V/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.2 mOhms | 1.5 V | 173 nC | Enhancement | PowerTrench Power Clip | ||
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1,659
In-stock
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Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0013 Ohms | 1.5 V | 260 nC | Enhancement | TrenchFET | ||
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782
In-stock
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Vishay Semiconductors | MOSFET 40V 200A, 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0008 Ohms | 1.5 V | 413 nC | Enhancement | TrenchFET | ||
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514
In-stock
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Vishay Semiconductors | MOSFET 40V 200A 375 AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0012 Ohms | 1.5 V | 291 nC | Enhancement | TrenchFET | ||
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965
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 8.1 mOhms | 1.5 V | 14.5 nC | Enhancement | |||
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1,595
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET 3-DDPAK/TO-2... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 5.1 mOhms | 1.5 V | 44 nC | Enhancement | NexFET |
