- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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616
In-stock
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IR / Infineon | MOSFET MOSFT 60V 300A 1.9mOhm 110nC LogLv7 | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 1.9 mOhms | 2.5 V | 160 nC | |||||
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452
In-stock
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IR / Infineon | MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 110 nC | ||||||
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182
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET PWR MOSFET 1.9mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 110 nC | ||||||
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VIEW | IR / Infineon | MOSFET 60V 300A 1.9 mOhm Auto Lgc Lvl MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 110 nC |