- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- ISOPLUS-i4-PAK-5 (1)
- PLUS-264-3 (1)
- Power-3x45-8 (1)
- Power-56-8 (5)
- PowerDI3333-8 (2)
- PowerPAK-SO-8L-4 (5)
- PQFN-8 (1)
- PTAB-5 (2)
- SMPD-24 (1)
- SO-FL-8 (1)
- SOT-227-4 (2)
- T-MAX-3 (1)
- TDSON-8 (3)
- TO-220-3 (8)
- TO-220FP-3 (6)
- TO-247-3 (28)
- TO-247-4 (1)
- TO-251-3 (2)
- TO-252-3 (35)
- TO-263-3 (4)
- TO-264-3 (4)
- TO-268-3 (12)
- TO-3P-3 (5)
- TO-3PF-3 (1)
- TO-3PN-3 (3)
- WDFN-8 (3)
- WDSON-2-3 (1)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.0075 Ohms (1)
- 0.012 Ohms (1)
- 0.016 Ohms (1)
- 0.022 Ohms (1)
- 1.2 mOhms (1)
- 1.4 mOhms (1)
- 1.7 mOhms (1)
- 1.8 mOhms (1)
- 1.95 mOhms (1)
- 10 mOhms (1)
- 10.5 mOhms (3)
- 10.6 mOhms (1)
- 11.3 mOhms (1)
- 110 mOhms (5)
- 113 mOhms (6)
- 12.2 mOhms (1)
- 125 mOhms (2)
- 13.5 mOhms (2)
- 13.6 mOhms (1)
- 14 mOhms (1)
- 14.5 mOhms (2)
- 140 mOhms (1)
- 15 mOhms (1)
- 15.5 mOhms (1)
- 15.6 mOhms (1)
- 15.9 mOhms (3)
- 160 mOhms (10)
- 165 mOhms (2)
- 17.4 mOhms (2)
- 17.9 mOhms (1)
- 170 mOhms (3)
- 18 mOhms (4)
- 2.1 mOhms (1)
- 2.4 mOhms (1)
- 20 mOhms (2)
- 200 mOhms (10)
- 215 mOhms (1)
- 22 mOhms (2)
- 23 mOhms (2)
- 230 mOhms (2)
- 24.5 mOhms (4)
- 240 mOhms (8)
- 245 mOhms (1)
- 25.8 mOhms (2)
- 27 mOhms (2)
- 28 mOhms (2)
- 30 mOhms (1)
- 300 mOhms (1)
- 32 mOhms (1)
- 350 mOhms (2)
- 370 mOhms (1)
- 40 mOhms (2)
- 400 mOhms (2)
- 440 mOhms (1)
- 450 mOhms (2)
- 5 mOhms (1)
- 52 mOhms (1)
- 6.4 mOhms, 1.95 mOhms (2)
- 6.7 mOhms (1)
- 60 mOhms (3)
- 65 mOhms (1)
- 7.5 mOhms (1)
- 7.5 mOhms, 5 mOhms (1)
- 7.8 mOhms (2)
- 75 mOhms (6)
- 8 mOhms (1)
- 8.1 mOhms (1)
- 85 mOhms (1)
- 9 mOhms (1)
- 95 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 115 nC (1)
- 12 nC (1)
- 14.7 nC (1)
- 140 nC (1)
- 16 nC (1)
- 16.7 nC (2)
- 18 nC (4)
- 19 nC (2)
- 20 nC, 33 nC (1)
- 20 nC, 43 nC (1)
- 21 nC (2)
- 22 nC (1)
- 24 nC (2)
- 240 nC (2)
- 25 nC (2)
- 260 nC (2)
- 264 nC (1)
- 27 nC (1)
- 31 nC (2)
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- 32 nC (2)
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- 335 nC (3)
- 34 nC (1)
- 35 nC (1)
- 37 nC (1)
- 38 nC (1)
- 40 nC (2)
- 41 nC (1)
- 41.3 nC (1)
- 41.8 nC (1)
- 44.3 nC (1)
- 51 nC (1)
- 53 nC (1)
- 545 nC (1)
- 56 nC (6)
- 57 nC (2)
- 62 nC (2)
- 66 nC (1)
- 69 nC (1)
- 7.1 nC, 31 nC (1)
- 70 nC (2)
- 71 nC (1)
- 72 nC (2)
- 78 nC (1)
- 82 nC (4)
- 9 nC (1)
- 9.2 nC, 40 nC (1)
- 96 nC (6)
- Package :
- Applied Filters :
141 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Fall Time | Package | Factory Pack Quantity | RoHS | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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12,500
In-stock
|
NXP Semiconductors | MOSFET PSMN022-30PL/SOT78/SIL3P | - 20 V, + 20 V | Tube | 1 Channel | 41 W | N-Channel | 30 V | 30 A | 22 mOhms | 1.3 V | 9 nC | TO-220 | 1000 | Green available | ||||||||||||
|
GET PRICE |
46,000
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFE... | - 25 V, + 25 V | Tape & Reel (TR) | 208 W | N-Channel | 600 V | 30 A | 85 mOhms | 3.25 V | 44.3 nC | 7.3 ns | D2PAK-3 | 1000 | Green available | |||||||||||
|
GET PRICE |
15,988
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 30 A | 25.8 mOhms | 1.2 V | 31 nC | Enhancement | OptiMOS | ||||||||
|
4,853
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 23 mOhms | Enhancement | PowerTrench | |||||||||||
|
2,912
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 1.8 mOhms | PowerTrench | ||||||||||||
|
2,879
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | Power-3x45-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 30 A | 7.5 mOhms | 20 nC, 43 nC | Power Stage PowerTrench SyncFet | |||||||||||
|
2,617
In-stock
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Fairchild Semiconductor | MOSFET 30V Dual N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 30 A | 7.5 mOhms, 5 mOhms | 1.8 V | 20 nC, 33 nC | PowerTrench SyncFET | ||||||||||||
|
2,847
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 30 A | 1.2 mOhms | 1.7 V | 66 nC | PowerTrench SyncFET | ||||||||||||
|
653
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 30A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 125 mOhms | 96 nC | CoolMOS | |||||||||||
|
1,020
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 30A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 2.5 V | 96 nC | Enhancement | CoolMOS | |||||||||
|
666
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 2.5 V | 96 nC | Enhancement | CoolMOS | |||||||||
|
5,757
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 30 A | 1.7 mOhms | Enhancement | OptiMOS | |||||||||||
|
484
In-stock
|
IXYS | MOSFET 500V 30A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | |||||||||||
|
1,480
In-stock
|
STMicroelectronics | MOSFET N Ch 1500V 2.5A Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | Enhancement | ||||||||||||
|
4,783
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | OptiMOS | |||||||||
|
150
In-stock
|
IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 30 A | 350 mOhms | 6.5 V | 310 nC | Enhancement | Polar, HiPerFET | |||||||||
|
955
In-stock
|
Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 113 mOhms | 3.5 V | 56 nC | Enhancement | CoolMOS | |||||||||
|
3,311
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3 | WDSON-2-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 30 A | 28 mOhms | OptiMOS | ||||||||||||||||
|
10,835
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 9 mOhms | Enhancement | OptiMOS | |||||||||||
|
3,979
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 1.4 mOhms | Enhancement | OptiMOS | |||||||||||
|
2,416
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 30 A | 30 mOhms | ||||||||||||||||
|
3,239
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 15 mOhms | Enhancement | PowerTrench | |||||||||||
|
1,943
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 30 A | 40 mOhms | Enhancement | QFET | |||||||||||
|
1,015
In-stock
|
Fairchild Semiconductor | MOSFET 25V PowerTrench Power Stage | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 30 A | 5 mOhms | Enhancement | Power Stage PowerTrench | ||||||||||||
|
8,340
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 30A 75mOhm 82nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | 82 nC | Enhancement | |||||||||||
|
439
In-stock
|
Fairchild Semiconductor | MOSFET 40V 100A 2.1mOhm N-Chan Power Trench | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 30 A | 2.1 mOhms | Enhancement | PowerTrench | |||||||||||
|
8,140
In-stock
|
STMicroelectronics | MOSFET Low charge STripFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | Enhancement | ||||||||||||
|
1,873
In-stock
|
STMicroelectronics | MOSFET N-Ch 30 Volt 30 Amp | 20 V | SMD/SMT | TO-252-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 20 mOhms | Enhancement | ||||||||||||
|
2,600
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 75V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 0.022 Ohms | 1.1 V | 34 nC | Enhancement | TrenchFET | |||||||||
|
2,790
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 60 mOhms | 16.7 nC |