- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
12,000
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 140A 7mOhm 170nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 130 A | 5.6 mOhms | 4 V | 170 nC | |||||
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54
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 170 nC | Enhancement | |||||||
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4
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 130 A | 9.1 mOhms | 4.5 V | 130 nC | Enhancement | TrenchT2, HiperFET | |||||
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VIEW | IXYS | MOSFET Trench T2 HiperFET Power MOSFET | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 9.1 mOhms | HiPerFET | ||||||||||
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VIEW | IXYS | MOSFET MOSFET Id130 BVdass100 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 170 nC | Enhancement | |||||||
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5
In-stock
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IXYS | MOSFET 130 Amps 100V 8.5 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | ||||||||
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GET PRICE |
3,200
In-stock
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IXYS | MOSFET 130 Amps 100V 8.5 Rds | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 130 Amps 100V 8.5 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | ||||||||
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VIEW | IXYS | MOSFET 130 Amps 100V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 130 A | 9.1 mOhms | ||||||||||||
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VIEW | IXYS | MOSFET 130 Amps 100V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 9.1 mOhms | |||||||||||
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VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 7 mOhms | 4 V | 170 nC |