- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,825
In-stock
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IR / Infineon | MOSFET MOSFT 30V 78A 3.2mOhm 36nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.2 mOhms | 36 nC | ||||||||
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234
In-stock
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IXYS | MOSFET 180 Amps 150V 0.011 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 11 mOhms | Enhancement | HyperFET | |||||
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2,987
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | ||||||
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3,973
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | ||||||
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430
In-stock
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IXYS | MOSFET MOSFET 650V/150A Ultra Junction X2 | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 150 A | 17 mOhms | 2.7 V | 430 nC | Enhancement | ||||
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211
In-stock
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IXYS | MOSFET 175V 150A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 175 V | 150 A | 12 mOhms | 2.5 V to 4.5 V | 63 nC | Enhancement | ||||
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129
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 150 A | 19 mOhms | HyperFET | |||||||||
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246
In-stock
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IXYS | MOSFET 170 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT, HiPerFET | |||
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109
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 150 A | 19 mOhms | HyperFET | |||||||||
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555
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.5 mOhms | 1.35 V | 54 nC | Enhancement | StrongIRFET | |||
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384
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 150A 4.9mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 120 nC | ||||||||
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663
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 150A 32nC 3.8mOhm Qg log lvl | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 32 nC | ||||||||
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52
In-stock
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IXYS | MOSFET 110 Amps 150V | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 4.5 V | 150 nC | Enhancement | ||||
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99
In-stock
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | |||
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46
In-stock
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | |||
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30
In-stock
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IXYS | MOSFET Trench HiperFETs Power MOSFETs | Through Hole | TO-268-3 | Tube | Si | N-Channel | 200 V | 150 A | 15 mOhms | HiPerFET | ||||||||||
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60
In-stock
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IXYS | MOSFET Trench HiperFETs Power MOSFETs | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 150 A | 15 mOhms | HiPerFET | |||||||||
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500
In-stock
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IR / Infineon | MOSFET N-CHANNEL 55 / 60 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 3.7 mOhms | 2 V | 230 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 150 Amps 100V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 150 A | 12 mOhms | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 150 Amps 100V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 150 A | 12 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 150 Amps 150V 0.0125 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 12.5 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 150 Amps 150V 0.0125 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 12.5 mOhms | Enhancement | HyperFET | |||||
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1,502
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 2.7mOhm 150A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 30 V | 150 A | 4.5 mOhms | 2.5 V | 42 nC | |||||||
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80
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 120 nC | Enhancement |
