- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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384
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 150A 4.9mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 120 nC | ||||||||
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556
In-stock
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IR / Infineon | MOSFET MOSFT 55V 150A 4.9mOhm 120nC | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 4 V | 180 nC | |||||||
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80
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 120 nC | Enhancement |