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Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
AUIRF1405ZS
1+
$2.920
10+
$2.480
100+
$1.980
250+
$1.880
RFQ
2,987
In-stock
IR / Infineon MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms 20 V SMD/SMT TO-263-3 - 55 C   Tube 1 Channel Si N-Channel 55 V 150 A 5.3 mOhms   120 nC Enhancement  
AUIRF1405ZL
1+
$2.920
10+
$2.480
100+
$1.980
250+
$1.880
RFQ
3,973
In-stock
IR / Infineon MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms 20 V Through Hole TO-262-3 - 55 C   Tube 1 Channel Si N-Channel 55 V 150 A 5.3 mOhms   120 nC Enhancement  
IRF1405ZPBF
1+
$2.120
10+
$1.800
100+
$1.440
500+
$1.260
RFQ
384
In-stock
Infineon Technologies MOSFET MOSFT 55V 150A 4.9mOhm 120nC 20 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 55 V 150 A 4.9 mOhms   120 nC    
CSD19506KTT
1+
$4.580
10+
$4.120
25+
$3.960
100+
$3.370
500+
$2.870
RFQ
279
In-stock
Texas instruments MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO... 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 150 A 2 mOhms 2.5 V 120 nC Enhancement NexFET
IRF1405ZSPBF
1+
$2.850
10+
$2.420
100+
$1.940
250+
$1.840
RFQ
80
In-stock
IR / Infineon MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC 20 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 150 A 4.9 mOhms   120 nC Enhancement  
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