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- Qg - Gate Charge :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,987
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 5.3 mOhms | 120 nC | Enhancement | ||||||
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556
In-stock
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IR / Infineon | MOSFET MOSFT 55V 150A 4.9mOhm 120nC | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 4 V | 180 nC | |||||||
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1,586
In-stock
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Texas instruments | MOSFET 100V N-CH NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 150 A | 2 mOhms | 2.1 V | 153 nC | Enhancement | ||||
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3,990
In-stock
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Texas instruments | MOSFET 100V N-CH NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 150 A | 2.8 mOhms | 2.2 V | 98 nC | Enhancement | ||||
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431
In-stock
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Texas instruments | MOSFET 80V, N-Channel NexFET Power Mosfet | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 150 A | 3.8 mOhms | 2.2 V | 76 nC | Enhancement | NexFET | |||
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279
In-stock
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Texas instruments | MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 150 A | 2 mOhms | 2.5 V | 120 nC | Enhancement | NexFET | |||
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80
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 150 A | 4.9 mOhms | 120 nC | Enhancement |
