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- Rds On - Drain-Source Resistance :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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129
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 150 A | 19 mOhms | HyperFET | |||||||||
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46
In-stock
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 150 Amps 100V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 150 A | 12 mOhms | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 150 Amps 150V 0.0125 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 12.5 mOhms | Enhancement | HyperFET |
