- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
8,860
In-stock
|
Nexperia | MOSFET 12V N-Channel Trench MOSFET | 8 V | SMD/SMT | WLCSP-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 5 A | 57 mOhms | 400 mV | 8.2 nC | Enhancement | ||
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GET PRICE |
2,402
In-stock
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Nexperia | MOSFET PMPB29XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 28 mOhms | 0.65 V | 12.4 nC | Enhancement | |||
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GET PRICE |
4,000
In-stock
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Nexperia | MOSFET 60/50V, 330/170 mA N/P-ch Trench MOSFET | +/- 20 V, +/- 20 V | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 50 V | 5 A | 1 Ohms | 1.6 V, - 1.6 V | 0.2 nC, 0.12 nC | Enhancement |
