- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,702
In-stock
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Fairchild Semiconductor | MOSFET 30/20V Nch Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 2.8 mOhms | Enhancement | PowerTrench | ||||
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5,075
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 1.7 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||
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2,909
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 13.5 mOhms | 7.1 nC | |||||||
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21,750
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET 8-VSONP -55 to... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 3.2 mOhms | 1 V | 54 nC | Enhancement | |||
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48,990
In-stock
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Texas instruments | MOSFET CSD17579Q3A 30 V 8-VSONP | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 8.7 mOhms | 1.1 V | 15 nC | Enhancement | NexFET | ||
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860
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 7.9 mOhms | 1.1 V | 7.9 nC | Enhancement | |||
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1,218
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 11.6 mOhms | 1 V | 5.4 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET MOSFET 30V 24A | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 13 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET N-Ch 30V FET 25A 30W 30nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 13 mOhms | 30 nC |
