- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,530
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 25 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 30 mOhms | Enhancement | ||||||
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1,180
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | ||||
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5,000
In-stock
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STMicroelectronics | MOSFET 100 V Mosfet 35 RDS 25A D2PAK | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 2.5 V | 38 nC | |||||
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VIEW | Infineon Technologies | MOSFET 55V 25A 43 mOhm Auto Logic Level MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 13.3 nC | ||||||||
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16
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET 55V 25A 43 mOhm Auto Logic Level MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 13.3 nC |