- Vgs - Gate-Source Voltage :
- Mounting Style :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Tradename :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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29,660
In-stock
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Fairchild Semiconductor | MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 34 nC | UniFET | |||||
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1,175
In-stock
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Fairchild Semiconductor | MOSFET PQFN88 PKG, 199mohm, 600V, SuperFET2 | 20 V | SMD/SMT | Power-88-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 12 A | 299 mOhms | 3.5 V | 39 nC | SuperFET II | ||||
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906
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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1,000
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 12 A | 0.26 Ohms | 3 V | 20 nC | Enhancement | ||||
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589
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 12 A | 0.26 Ohms | 2 V | 20 nC | Enhancement | |||||
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536
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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613
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 320 mOhms | 2 V to 4 V | 19 nC | Enhancement | ||||
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20
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 600V 1... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 12 A | 350 mOhms | 3 V | 58 nC | |||||
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2,710
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 250 mOhms | 26 nC | Enhancement | CoolMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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498
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 12 A | 320 mOhms | 2 V to 4 V | 19 nC | Enhancement | |||||
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83
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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121
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 12 A | 0.26 Ohms | 2 V | 20 nC | Enhancement | |||||
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GET PRICE |
23,550
In-stock
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onsemi | MOSFET 600V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 650 mOhms | Enhancement | |||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET LOW POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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86,520
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 650 mOhms | Enhancement | ||||||
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GET PRICE |
86,200
In-stock
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Toshiba | MOSFET MOSFET DTMOS-II N-CH 600V, 12A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tray | 1 Channel | Si | N-Channel | 600 V | 12 A | 400 mOhms | Enhancement | |||||
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8,500
In-stock
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Toshiba | MOSFET MOSFET DTMOS-II N-Ch 600V 12A | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 400 mOhms | Enhancement | ||||||
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524
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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194
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 12 A | 250 mOhms | Enhancement | CoolMOS |
