- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,950
In-stock
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Siliconix / Vishay | MOSFET N-Channel 60V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.018 Ohms | 1.5 V | 41 nC | Enhancement | TrenchFET | |||
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16,630
In-stock
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Vishay Semiconductors | MOSFET 60V 12A 6.8W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.017 Ohms | 1.5 V | 30 nC | Enhancement | TrenchFET | |||
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1,335
In-stock
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Vishay Semiconductors | MOSFET 40V 12A 33W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12 A | 0.0138 Ohms | 1.5 V | 22.5 nC | Enhancement | TrenchFET | |||
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83
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET LOW POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 297 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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VIEW | Vishay Semiconductors | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 0.0165 Ohms | 1.5 V | 43 nC | Enhancement |
