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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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539
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Infineon Technologies | MOSFET MOSFT 55V 175A 4.7mOhm 150nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 4 V | 150 nC | |||
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172
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 175 A | 4.7 mOhms | 150 nC | Enhancement |
