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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TPH1400ANH,L1Q
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Toshiba MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC 20 V SMD/SMT SOP-Advance-8     Reel 1 Channel Si N-Channel 100 V 42 A 11.3 mOhms 2 V to 4 V 22 nC Enhancement
TK42A12N1,S4X
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Toshiba MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V 20 V Through Hole TO-220FP-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 120 V 42 A 7.8 mOhms 2 V to 4 V 52 nC Enhancement
TPCA8057-H,LQ(M
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Toshiba MOSFET N-Ch 30V FET 42A 57W 4300pF 61nC   SMD/SMT SOP-Advance-8     Reel 1 Channel Si N-Channel 30 V 42 A 3.2 mOhms   61 nC  
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