- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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23,565
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.9 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||
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GET PRICE |
7,083
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 31 mOhms | 18 nC | PowerTrench | ||||||
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GET PRICE |
5,529
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.9 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||
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GET PRICE |
1,747
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 42A 36mOhm 73.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | |||||||
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GET PRICE |
1,696
In-stock
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Vishay Semiconductors | MOSFET 100V 32A 27watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 0.0176 Ohms | 1.5 V | 27 nC | Enhancement | TrenchFET | ||
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GET PRICE |
407
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 42A 36mOhm 73.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | |||||||
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GET PRICE |
690
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | ||
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GET PRICE |
170
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 36mOhms 73.3 nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | Enhancement | ||||
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GET PRICE |
73
In-stock
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onsemi | MOSFET NFET D2PAK 100V 40A 30MO | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 28 mOhms | ||||||
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GET PRICE |
5,046
In-stock
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Toshiba | MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 11.3 mOhms | 2 V to 4 V | 22 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | |||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 0.0176 Ohms | 1.5 V | 27 nC | Enhancement | TrenchFET |
