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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Technology :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
SCT20N120
1+
$13.210
10+
$12.150
25+
$11.640
100+
$10.260
RFQ
404
In-stock
STMicroelectronics MOSFET 1200V silicon carbide MOSFET - 10 V, + 25 V Through Hole HiP247-3 - 55 C + 200 C Tube 1 Channel SiC N-Channel 1.2 kV 20 A 215 mOhms 2 V 45 nC Enhancement
STP28N65M2
1+
$2.740
10+
$2.320
100+
$1.860
500+
$1.630
RFQ
4,820
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220-3   + 150 C Tube 1 Channel Si N-Channel 650 V 20 A 150 mOhms 2 V 35 nC Enhancement
STF28N65M2
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RFQ
13,960
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-220FP-3   + 150 C Tube 1 Channel Si N-Channel 650 V 20 A 150 mOhms 2 V 35 nC Enhancement
STW28N65M2
1+
$2.770
10+
$2.360
100+
$2.040
250+
$1.940
RFQ
438
In-stock
STMicroelectronics MOSFET POWER MOSFET 25 V Through Hole TO-247-3   + 150 C Tube 1 Channel Si N-Channel 650 V 20 A 150 mOhms 2 V 35 nC Enhancement
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