- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.0031 Ohms (1)
- 0.0035 Ohms (2)
- 0.009 Ohms (1)
- 0.014 Ohms (1)
- 0.021 Ohms (1)
- 1 MOhms (1)
- 1.65 mOhms (1)
- 1.8 mOhms (2)
- 11 mOhms (1)
- 110 mOhms (1)
- 12.6 mOhms (1)
- 135 mOhms (3)
- 150 mOhms (4)
- 154 mOhms (1)
- 160 mOhms (4)
- 24 mOhms (2)
- 250 mOhms (2)
- 27 mOhms (1)
- 270 mOhms (4)
- 30 mOhms (1)
- 300 mOhms (2)
- 310 mOhms (1)
- 32 mOhms (2)
- 320 mOhms (4)
- 340 mOhms (1)
- 35 mOhms (1)
- 36 mOhms (1)
- 380 mOhms (1)
- 44 mOhms (2)
- 7.4 mOhms, 1.6 mOhms (1)
- 78 mOhms (2)
- 8.5 mOhms (2)
- 82 mOhms (1)
- 87 mOhms (3)
- Applied Filters :
60 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
2,990
In-stock
|
Vishay Semiconductors | MOSFET 100V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 0.021 Ohms | 2.5 V | 63 nC | Enhancement | TrenchFET | ||
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|
GET PRICE |
4,225
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 32 A | 27 mOhms | Enhancement | QFET | ||||
|
|
GET PRICE |
2,965
In-stock
|
Fairchild Semiconductor | MOSFET PT7 60/20v SG, N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 1.65 mOhms | 3.3 V | PowerTrench Power Clip | ||||
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GET PRICE |
471
In-stock
|
Infineon Technologies | MOSFET N-Ch 560V 32A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 110 mOhms | Enhancement | CoolMOS | ||||
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GET PRICE |
3,270
In-stock
|
onsemi | MOSFET NFET DPAK 100V 34A 37MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 30 mOhms | 2 V | 40 nC | ||||
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GET PRICE |
42
In-stock
|
IXYS | MOSFET 32 Amps 1200V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 32 A | 310 mOhms | 6.5 V | 360 nC | Enhancement | Polar, HiPerFET | ||
|
|
GET PRICE |
2,217
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.02 Ohm typ. 35A STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | ||||
|
|
GET PRICE |
824
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 87 mOhms | 2 V | 56.5 nC | Enhancement | ||||
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|
GET PRICE |
100
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | 30 V | Through Hole | TO-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 195 nC | HyperFET | |||||
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|
GET PRICE |
909
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 87 mOhms | 2 V | 56.5 nC | Enhancement | ||||
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|
GET PRICE |
1,149
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 87 mOhms | 2 V | 56.5 nC | Enhancement | ||||
|
|
GET PRICE |
2,326
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 32A 44mOhm 48nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 44 mOhms | 4 V | 71 nC | ||||
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|
GET PRICE |
2,105
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 0.014 Ohms | 1.5 V | 44 nC | Enhancement | TrenchFET | ||
|
|
GET PRICE |
885
In-stock
|
Vishay Semiconductors | MOSFET 40V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 32 A | 0.0035 Ohms | 1.5 V | 120 nC | Enhancement | TrenchFET | ||
|
|
GET PRICE |
1,898
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | Enhancement | |||
|
|
GET PRICE |
948
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel Pwr Trench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 32 mOhms | Enhancement | PowerTrench | ||||
|
|
GET PRICE |
686
In-stock
|
Fairchild Semiconductor | MOSFET 100V 32a .36Ohm/VGS=1V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 36 mOhms | Enhancement | PowerTrench | ||||
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|
GET PRICE |
330
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 82 mOhms | Enhancement | QFET | ||||
|
|
GET PRICE |
900
In-stock
|
Siliconix / Vishay | MOSFET 100V 32A 27watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 0.009 Ohms | 1.5 V | 51 nC | Enhancement | TrenchFET | ||
|
|
GET PRICE |
1,078
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 48nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 44 mOhms | 48 nC | Enhancement | ||||
|
|
GET PRICE |
43
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 195 nC | HyperFET | |||||
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|
GET PRICE |
60
In-stock
|
IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | ||
|
|
GET PRICE |
20
In-stock
|
IXYS | MOSFET Polar HiPerFETs MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 32 A | 300 mOhms | 3.5 V to 6.5 V | 215 nC | Enhancement | HyperFET | ||
|
|
GET PRICE |
30
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A | 30 V | Through Hole | TO-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | 140 nC | HyperFET | |||||
|
|
GET PRICE |
29
In-stock
|
IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | 5 V | 38 nC | Enhancement | Trench | ||
|
|
GET PRICE |
19
In-stock
|
IXYS | MOSFET 32 Amps 800V 0.27 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | Enhancement | HyperFET | ||||
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|
GET PRICE |
2
In-stock
|
IXYS | MOSFET 32 Amps 800V 0.27 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | 5 V | 150 nC | Enhancement | PolarHV, HiPerFET | ||
|
|
GET PRICE |
3
In-stock
|
IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | ||
|
|
GET PRICE |
21
In-stock
|
IXYS | MOSFET 650v/32A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 135 mOhms | 3 V | 54 nC | Enhancement | |||
|
|
GET PRICE |
27
In-stock
|
IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 135 mOhms | 3 V | 54 nC | Enhancement |
