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- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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466
In-stock
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IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 500 A | 1.1 mOhms | 1 V | 177 nC | Enhancement | |||
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104
In-stock
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IXYS | MOSFET TRENCHT2 PWR MOSFET 40V 500A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 40 V | 500 A | 1.6 mOhms | 3.5 V | 405 nC | Enhancement | TrenchT2 | |||
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24
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | SMPD-24 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 500 A | 1.6 mOhms | 2.5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||
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16
In-stock
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IXYS | MOSFET Trench T2 Power MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 40 V | 500 A | 1.6 mOhms | 3.5 V | 405 nC | Enhancement | TrenchT2 |
