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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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20,122
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 150 mOhms | 44.7 nC | Enhancement | ||||
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784
In-stock
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Infineon Technologies | MOSFET 200V 24A 0.15 Ohm 25nC Qg 18A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 150 mOhms | 44.7 nC | Enhancement | ||||
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826
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 150 mOhms | 2 V to 4 V | 44.7 nC | Enhancement | |||
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53
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 18A 150mOhm 44.7nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 150 mOhms | 44.7 nC | Enhancement |
