- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
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- 4.2 mOhms (3)
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- 5.1 mOhms (2)
- 5.2 mOhms (1)
- 5.6 mOhms (1)
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- 6.5 mOhms (7)
- 6.6 mOhms (2)
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- Qg - Gate Charge :
- Applied Filters :
61 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
1,600
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2 mOhms | 1 V | 186 nC | Enhancement | PowerTrench | ||
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GET PRICE |
1,268
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 110 A | 20 mOhms | 4 V | 95 nC | PowerTrench | ||||
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GET PRICE |
4,665
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 76 nC | Enhancement | |||||
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GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 3.9 mOhms | 4.5 V | 117 nC | Enhancement | |||
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GET PRICE |
341
In-stock
|
IXYS | MOSFET Linear Extended FBSOA Power MOSFET | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | ||||
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GET PRICE |
305
In-stock
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | |||
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GET PRICE |
1,394
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 6mOhm 110A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 110 A | 7 mOhms | 2 V to 4 V | 60 nC | |||||
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GET PRICE |
1,461
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 113.3 nC | |||||||
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GET PRICE |
8,520
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 9 mOhms | Enhancement | |||||
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|
GET PRICE |
15,810
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 110A 8mOhm 97.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | |||||||
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GET PRICE |
725
In-stock
|
Fairchild Semiconductor | MOSFET 80V 110A N-Chnl PowerTrench MOSFET | 20 V | Through Hole | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 110 A | 7 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||
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GET PRICE |
716
In-stock
|
Fairchild Semiconductor | MOSFET 40V 110A 1.2mOhm N PowerTrench MOSFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 1 MOhms | PowerTrench | ||||||
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GET PRICE |
601
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 110 A | 2 mOhms | 3 V | 131 nC | PowerTrench | |||
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GET PRICE |
786
In-stock
|
Fairchild Semiconductor | MOSFET MV7 60V N-channel Standard Gate PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 3.2 mOhms | 2 V | 126 nC | Enhancement | PowerTrench | ||
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|
GET PRICE |
1,492
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | ||||
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|
GET PRICE |
15,260
In-stock
|
STMicroelectronics | MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 110 A | 5.6 mOhms | 2.5 V | 150 nC | Enhancement | ||||
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GET PRICE |
679
In-stock
|
IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 4.5 V | 150 nC | Enhancement | HiPerFET | ||
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GET PRICE |
65
In-stock
|
IXYS | MOSFET 600V 110A 0.056Ohm PolarP3 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 110 A | 56 mOhms | 5 V | 245 nC | HyperFET | |||||
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GET PRICE |
1,894
In-stock
|
onsemi | MOSFET 24V 110A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 110 A | 4.1 mOhms | Enhancement | |||||
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GET PRICE |
799
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 88 nC | StrongIRFET | |||
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GET PRICE |
2,362
In-stock
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onsemi | MOSFET NFET 24V SPCL TR | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 24 V | 110 A | 4.6 mOhms | |||||||||
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GET PRICE |
470
In-stock
|
Vishay Semiconductors | MOSFET 55V 110A 158W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 0.0047 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | ||
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GET PRICE |
1,060
In-stock
|
Infineon Technologies | MOSFET MOSFET N CH 60V 110A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||
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GET PRICE |
797
In-stock
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Infineon Technologies | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 130 nC | Enhancement | StrongIRFET | ||||
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GET PRICE |
226
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 110 A | 2.8 mOhms | 3 V | 131 nC | Enhancement | PowerTrench | ||
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|
GET PRICE |
410
In-stock
|
Fairchild Semiconductor | MOSFET 40V, 110A, 2.2m Ohm NChannel PowerTrench | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 2.2 Ohms | 2.83 V | 14 nC, 107 nC | PowerTrench | |||
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GET PRICE |
322
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | Enhancement | ||||
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GET PRICE |
416
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 110A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.2 mOhms | 3.7 V | 88 nC | StrongIRFET | |||
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GET PRICE |
468,200
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 110A 8mOhm 97.3nC | 20 V | Through Hole | TO-220 | Tube | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | |||||||
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GET PRICE |
60
In-stock
|
IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT |
