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Manufacture :
Packaging :
Technology :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
NVB5860NLT4G
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RFQ
766
In-stock
onsemi MOSFET NFET D2PAK 60V 169A 3MOHM   SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 220 A 2.8 mOhms        
IXFA220N06T3
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RFQ
62
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IXYS MOSFET 60V/220A TrenchT3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel SiC N-Channel 60 V 220 A 4 mOhms 2 V 136 nC Enhancement HiPerFET
IXTA220N04T2
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RFQ
39
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IXYS MOSFET 220 Amps 40V 0.0035 Rds 20 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 220 A 2.8 mOhms 4 V 112 nC Enhancement TrenchT2
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