- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,804
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 20V N-Chan | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 90 mOhms | 400 mV | 7 nC | Enhancement | ||||
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2,471
In-stock
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Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.2 A | 24 mOhms | 1.1 V | 13.2 nC | Enhancement | ||||
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1,710
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | 20 V | SMD/SMT | PowerDI3333-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 54 mOhms | 1.5 V | 25.2 nC | Enhancement | PowerDI | ||||
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1,785
In-stock
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Diodes Incorporated | MOSFET N-Ch -20V VDSS Enchanced Mosfet | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 25 mOhms | Enhancement | ||||||
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949
In-stock
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Diodes Incorporated | MOSFET N-Ch 20V VDSS 8 Vgss 30A IDM | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 25 mOhms | Enhancement | ||||||
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6,000
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 99 mOhms | 25.2 nC | Enhancement | PowerDI |
