- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,566
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET SH | 20 V | SMD/SMT | DirectFET-SH | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 53 mOhms | 8.7 nC | Enhancement | ||||
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GET PRICE |
1,989
In-stock
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Fairchild Semiconductor | MOSFET 100/20V PT5 N-Chan PowerTrench MOSFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 104 mOhms | PowerTrench | ||||||
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GET PRICE |
1,710
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | 20 V | SMD/SMT | PowerDI3333-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 54 mOhms | 1.5 V | 25.2 nC | Enhancement | PowerDI | |||
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GET PRICE |
6,000
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 99 mOhms | 25.2 nC | Enhancement | PowerDI |
