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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,000
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 4.2 A | 3.3 Ohms | Enhancement | ||||||
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996
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.2 A | 1.57 Ohms | 3 V to 5 V | 9 nC | UniFET | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 1.28V Ohm 4.2A SuperMESH 3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 4.2 A | 1.6 Ohms | 26 nC | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 4.2 A | 1.6 Ohms | 26 nC |
