- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
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15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,687
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | |||||
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1,515
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | |||||
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3,499
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 3 A | 4.5 Ohms | Enhancement | |||||||
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2,376
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 2.5A Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 19 nC | Enhancement | ||||||
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2,550
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 600 mA | 4.5 Ohms | Enhancement | |||||||
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3,183
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | |||||||
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773
In-stock
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onsemi | MOSFET NFET SOT223 400V 1.7A | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 400 mA | 4.5 Ohms | 800 mV | 5.5 nC | Enhancement | |||||
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9,245
In-stock
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Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||||
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138
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | Enhancement | HyperFET | ||||||
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4,603
In-stock
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Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||||
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5,400
In-stock
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Diodes Incorporated | MOSFET N-Ch. 50V 500mA AEC-Q101 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 800 mV | 0.6 nC | Enhancement | |||||
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1,115
In-stock
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onsemi | MOSFET NFET DPAK 800V 2.9A 4.5OH | SMD/SMT | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 2.9 A | 4.5 Ohms | |||||||||||
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341
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W | 12 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 220 mA | 4.5 Ohms | 1 V | 0.35 nC | Enhancement | |||||
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10,000
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement |