- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
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24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
46,500
In-stock
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Diodes Incorporated | MOSFET MOSFETBVDSS: 41V-60V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | P-Channel | 60 V | 14 A | 60 mOhms | 1.2 V | 17.1 nC | TO-252 | 2500 | Green available | |||||||||
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276,340
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 P-CH -20V | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 60 mOhms | Enhancement | PowerTrench | ||||||||
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6,972
In-stock
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Fairchild Semiconductor | MOSFET -20V Dual P-Channel PowerTrench MOSFET | 12 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.1 A | 60 mOhms | Enhancement | PowerTrench | ||||||||
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6,897
In-stock
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Fairchild Semiconductor | MOSFET Dual P-Ch, -20V PowerTrench | 8 V | SMD/SMT | UMLP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.6 A | 60 mOhms | Enhancement | PowerTrench | ||||||||
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3,588
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -40A 60mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | |||||||||||
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1,228
In-stock
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Fairchild Semiconductor | MOSFET -33.5A,-100V, P-ch | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 33.5 A | 60 mOhms | Enhancement | QFET | ||||||||
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1,147
In-stock
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IR / Infineon | MOSFET Automotive MOSFET P 38A 150nC D2Pak | SMD/SMT | TO-252-3 | Reel | Si | P-Channel | - 100 V | - 38 A | 60 mOhms | 150 nC | |||||||||||||
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229,100
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | - 4 V | 42 nC | ||||||||
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1,282
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 60mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | Enhancement | ||||||||
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1,513
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH 60mOhm HEXFET -31A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | Enhancement | ||||||||
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2,459
In-stock
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Diodes Incorporated | MOSFET 40V 9.9A P-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 9.9 A | 60 mOhms | - 1 V | 29.6 nC | Enhancement | |||||||
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8,608
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | |||||||
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2,436
In-stock
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Diodes Incorporated | MOSFET P-CHANNEL ENHANCEMENT MODE | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 60 mOhms | Enhancement | |||||||||
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6,730
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | |||||||||||
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35,730
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 33.5 A | 60 mOhms | Enhancement | |||||||||
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256
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | |||||||||||
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405
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | - 4 V | 180 nC | Enhancement | |||||||
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3,685
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | |||||||
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350
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | |||||||||||
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3,144
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | Enhancement | ||||||||
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VIEW | Infineon Technologies | MOSFET Automotive MOSFET P 38A 150nC D2Pak | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 100 V | - 38 A | 60 mOhms | 150 nC | |||||||||||||
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VIEW | IR / Infineon | MOSFET AUTO -20V 1 N-CH HEXFET 60mOhms | 12 V | SMD/SMT | SO-8 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.4 A | 60 mOhms | 15 nC | Enhancement | |||||||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-4A 3Pin | 8 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 60 mOhms | Enhancement | |||||||||
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VIEW | IR / Infineon | MOSFET Automotive MOSFET P 38A 150nC D2Pak | SMD/SMT | TO-252-3 | Reel | Si | P-Channel | - 100 V | - 38 A | 60 mOhms | 150 nC |
