- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,790
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 60 mOhms | 16.7 nC | |||||||
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519
In-stock
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IR / Infineon | MOSFET MOSFT 55V 27A 16.7nC 35mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 27 A | 60 mOhms | 16.7 nC | |||||||
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4,816
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 5A 60mOhm 7nC Log Lvl | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5 A | 60 mOhms | 3 V | 11 nC | ||||||
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688
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 30 A | 60 mOhms | 1 V to 2 V | 16.7 nC | Enhancement |
