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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,690
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 50 A | 60 mOhms | 3 V | 90 nC | Enhancement | |||||
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199
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 50 A | 60 mOhms | 4 V | 18 nC | Enhancement | |||||
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58
In-stock
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STMicroelectronics | MOSFET N-channel 600 V FDMesh | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 51 A | 60 mOhms | Enhancement | ||||||
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24
In-stock
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IXYS | MOSFET 47 Amps 600V 70 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 60 mOhms | 4 V | 255 nC | Enhancement | CoolMOS | |||
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1,400
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 47 A | 60 mOhms | 3 V | 260 nC | Enhancement | |||||
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38
In-stock
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IXYS | MOSFET 300V 52A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 60 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 42 Amps 200V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 42 A | 60 mOhms | Enhancement | HyperFET |
