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- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
-
- 10 A (5)
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- 120 A (2)
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- 6.4 A (2)
- 6.5 A (1)
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- 76 A (2)
- 8 A (2)
- 8.6 A (3)
- 80 A (2)
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- 9.8 A (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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57 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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7,868
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | |||||
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4,979
In-stock
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Fairchild Semiconductor | MOSFET 30V 9A N-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 20 mOhms | Enhancement | PowerTrench | |||||
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4,980
In-stock
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Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.5 A | 20 mOhms | Enhancement | PowerTrench SyncFET | |||||
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5,870
In-stock
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Fairchild Semiconductor | MOSFET 30V Dual N-Channel PowerTrench MOSFET | SMD/SMT | Power-33-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 18 A | 20 mOhms | 7.5 nC, 15.7 nC | PowerTrench SyncFET | |||||||
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3,755
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||
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5,356
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8 A | 20 mOhms | Enhancement | PowerTrench | |||||
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2,423
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 20 mOhms | Enhancement | ||||||
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2,173
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | |||
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GET PRICE |
177,900
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 76A 20mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 76 A | 20 mOhms | 100 nC | Enhancement | ||||
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1,268
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 110 A | 20 mOhms | 4 V | 95 nC | PowerTrench | |||||
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4,557
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | |||
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4,624
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1 V | 30 nC | Enhancement | ||||
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3,730
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 49 A | 20 mOhms | 40.7 nC | ||||||||
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4,425
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||
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2,755
In-stock
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Fairchild Semiconductor | MOSFET 60V N-CHAN PwrTrench 60V 36A 26mOhm | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 36 A | 20 mOhms | ||||||||
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1,873
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 30 Amp | 20 V | SMD/SMT | TO-252-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 20 mOhms | Enhancement | ||||||
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5,255
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 20 mOhms | 2.4 V | 19.1 nC | Enhancement | ||||
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3,968
In-stock
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onsemi | MOSFET NFET SO8 30V 8A TR 0.020R | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.4 A | 20 mOhms | 7.7 nC | Enhancement | |||||
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2,306
In-stock
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STMicroelectronics | MOSFET N-channel 60 V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 28 A | 20 mOhms | Enhancement | ||||||
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2,011
In-stock
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onsemi | MOSFET NFET DPAK 90V 38A 25MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 90 V | 41 A | 20 mOhms | |||||||||||
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8,382
In-stock
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Nexperia | MOSFET 20V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8.6 A | 20 mOhms | 400 mV | 13.4 nC | Enhancement | ||||
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248
In-stock
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Fairchild Semiconductor | MOSFET 60V NCHAN PwrTrench | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 21 A | 20 mOhms | PowerTrench | ||||||||
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9,581
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.4 A | 20 mOhms | 15.6 nC | ||||||
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3,798
In-stock
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Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.6 A | 20 mOhms | Enhancement | ||||||
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579
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 30 A | 20 mOhms | 40 nC | ||||||
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1,513
In-stock
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STMicroelectronics | MOSFET N-channel 30 V 27 A TO 220 | 22 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 27 A | 20 mOhms | |||||||
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11,900
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 150V 76A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 76 A | 20 mOhms | 4.5 V | 97 nC | Enhancement | TrenchT2, HiperFET | ||||
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1,237
In-stock
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Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | Enhancement | ||||||
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1,286
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 7 A | 20 mOhms | 3 V | 19.1 nC | Enhancement | ||||
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1,182
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement |
