- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,457
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 4 V | 85 nC | |||||
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121
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 71 A | 3.3 mOhms | 4 V | 90 nC | Enhancement | |||||
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50
In-stock
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IXYS | MOSFET TRENCHT2 PWR MOSFET 55V 260A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | ||||
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37
In-stock
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IXYS | MOSFET 260 Amps 55V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | ||||
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800
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 220A 3.3mOhm 190nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 4 V | 190 nC | |||||
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VIEW | IXYS | MOSFET 200 Amps 55V 0.0042 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 200 A | 3.3 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | |||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 75 A | 3.3 mOhms | 4 V | 130 nC | Enhancement |
