- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,235
In-stock
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Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 73 A | 7.9 mOhms | 2 V | 35 nC | Enhancement | |||||
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27,800
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 87 A | 7.9 mOhms | 3 V | 40.7 nC | Enhancement | OptiMOS | |||
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2,194
In-stock
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STMicroelectronics | MOSFET N-Ch 60V 6.6mOhm 77A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 77 A | 7.9 mOhms | 76 nC | |||||||||
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2,496
In-stock
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Fairchild Semiconductor | MOSFET MV8 40/20V 740A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.9 mOhms | 2 V | 24 nC | Enhancement | PowerTrench | ||||
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1,107
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 7.9 mOhms | 3.7 V | 58 nC | StrongIRFET | |||||
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GET PRICE |
60,200
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 65A 9.3mOhm 83nC | 30 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 43 A | 7.9 mOhms | 81 nC | |||||||||
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266
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 7.9 mOhms | 71 nC | OptiMOS | ||||||
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730
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -80A TO220-3 OptiMOS-P2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 40 V | - 80 A | 7.9 mOhms | OptiMOS | ||||||||||
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3,548
In-stock
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Texas instruments | MOSFET CSD83325L, Dual N-Ch nel NexFET? | 10 V, 10 V | SMD/SMT | BGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 8 A | 7.9 mOhms | 750 mV | 10.9 nC | Enhancement | NexFET | ||||
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860
In-stock
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Texas instruments | MOSFET 30V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 7.9 mOhms | 1.1 V | 7.9 nC | Enhancement | |||||
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200
In-stock
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Toshiba | MOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 34 A | 7.9 mOhms | 2 V to 4 V | 38 nC | Enhancement | ||||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13.4 A | 7.9 mOhms | Enhancement | OptiMOS | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 14A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 7.9 mOhms | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 156 A | 7.9 mOhms | 89 nC | Enhancement | ||||||
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443
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms | OptiMOS | ||||||||||
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910
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms | 49 nC | OptiMOS | ||||||
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440
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms | 2 V | 47 nC | Enhancement | OptiMOS | ||||
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59
In-stock
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IR / Infineon | MOSFET MOSFT 100V 97A 9.3mOhm 81nC | 30 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 43 A | 7.9 mOhms | 81 nC | ||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms |